Polishing
Reclaim
After defective epitaxy and/or implantation.
Reduce material cost (Homo or Hétéroepitaxy).
| SiC | AIN | GaN | Al2O3 | ZnO | Ge, CdTe, SiGe silice … | |
|---|---|---|---|---|---|---|
| Reclaim | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ |
Chemical reclaim of GaN on SiC
After defective epitaxy and/or implantation.
Reduce material cost (Homo or Hétéroepitaxy).
| SiC | AIN | GaN | Al2O3 | ZnO | Ge, CdTe, SiGe silice … | |
|---|---|---|---|---|---|---|
| Reclaim | ✓ | ✓ | ✓ | ✓ | ✓ | ✓ |
Chemical reclaim of GaN on SiC