Polishing
Thinning
Before or after device processing for 2”, 3”.
| SiC | AIN | GaN | Al2O3 | ZnO | Ge, CdTe, SiGe silice … | |
|---|---|---|---|---|---|---|
| Thinning | ✓ |
• 2” and 3” wafers - 100µm, 50µm and less
• Thickness 50µm
Before or after device processing for 2”, 3”.
| SiC | AIN | GaN | Al2O3 | ZnO | Ge, CdTe, SiGe silice … | |
|---|---|---|---|---|---|---|
| Thinning | ✓ |
• 2” and 3” wafers - 100µm, 50µm and less
• Thickness 50µm