Polishing

Surface quality

Improve yields and device performance
(from as-cut or on commercial wafers for wafer manufacturers or users)

	SiC	AIN	GaN	Al₂O₃	ZnO	Ge, CdTe, SiGe silice …
Polishing	✓	✓	✓	✓	✓	✓

Surface quality

SiC	4H(n-type and SI) on-axis − 8° off		6H(n-type and SI) on-axis − 8° off		4H - 6H a- & m-plane	3C
Face	Si	C	Si	C	N/A
RMS**(Å)	<1*	<1*	<1*	<1*	<1*	<5

Other materials	AI₂O₃ c- & r-plane	ZnO		AIN		GaN
Face	N/A	Zn	O	AI	N	Ga	N
RMS**(Å)	<1 - 2*	<1*	<1*	<3	-	1 - 2	1

* with atomic steps
** measured by AFM, field size 5µm x 5µm in tapping mode