Polishing
Publications
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
Y. Shishkin, S. P. Rao, O. Kordina, I. Agafonov, A. Maltsev, J. Hassan, A. Henry, C. Moisson and S.E. Saddow
Materials Science Forum Vols. 556-557 (2007) pp 73-76
A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation During High Field Etching of SiC
Y. Ke, C. Moisson, S. Gaan, R.M. Feenstra, R.P. Devaty and W.J. Choyke
Materials Science Forum Vols. 527-529 (2006) pp743-746
Processing of poly-SiC Substrates with Large Grains for Wafer-Bonding
G. Chichignoud, L. Auvray, E. Blanquet, M. Anikin, E. Pernot, J-M. Bluet, P. Chaudouλt, M. Mermoux, C. Moisson, F. Letertre, M. Pons, R. Madar
Materials Science Forum Vols. 527-529 (2006) pp 71-74
Growth of GaN quantum dots on nonpolar A -plane SiC by molecular-beam epitaxy
S. Founta, F. Rol, , E. Bellet-Amalric, E. Sarigiannidou, B. Gayral, C. Moisson, H. Mariette and B. Daudin
Physica Status Solidi (b), Volume 243, Issue 15 , Pages3968 - 3971
Regrowth of 3C-SiC on CMP treated 3C-SiC/Si Epitaxial Layers
H. Mank, C. Moisson, D. Turover, Mark Twigg and Stephen E. Saddow
Materials Science Forum Vols. 483-485 (2005) pp. 197-2005
GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy
S. Founta, F. Rol, T. Andreev, B. Gayral, E. Bellet-Amalric, C. Moisson, H. Mariette and B. Daudin
Phys .stat. sol.(c) 2, 2341 (2005)
LPMOCVD growth of GaN on silicon carbide
M-A. Di Forte-Poisson, A. Romann, M. Tordjman, M. Magis, J. Di Persio, C. Jacques, P.Vicente
Journal of Crystal Growth 248 (2003) 533-536
Direct growth of high quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC substates
P. Vicente, E.Pernot, D. Chaussende and J. Camassel
Materials Science Forum Vols. 389-393(2002) pp729-732
Optical Characterization of SiC Materials: Bulk and Implanted Layers
J. Camassel, P. Vicente and L.A. Falkovski
Raman scattering as a probing method of subsurface damage in SiC
P. Vicente, D. David and J. Camassel
Materials Science and Engineering B, Volume 80, Issues 1-3, 22 March 2001, pp348-351
Atomic-Step Observations 6H-and 15R-SiC Polished Surfaces
P. Vicente, E.Pernot, D. Chaussende and J. Camassel
Materials Science Forum Vols. 389-393(2002) pp729-732