Epitaxy
4H-SiC
| Substrate | |
|---|---|
| Substrate diameter | 2’’, 3’’, 4” |
| Other properties | Si face 4° or 8° off |
| Layer | 4H-SiC |
| Thickness range 1 | 0 – 15µm |
| Thickness variation 1 (σ/mean) | ≤ 10% |
| Electrical conductivity | n type |
| Unintentional doping 2 (ND-NA) | ≤1x1015 cm-3 |
| AI incorporation 3 | ≤1x1014 cm-3 |
| Voluntary doping | Nitrogen |
| Doping range 2,3 | Up to 5x1018 cm-3 |
| Doping variation 2,3 (σ/mean) | ≤ 30% |
| Other services – on client’s request | |
| Epilayer planarization | Reduction of epilayer roughness down to <1Å |
| Detailed report on the layer properties | FTIR, C-V, XRD, SEM and AFM results |
1. Detailed thickness profile obtained by FTIR spectrometry
2. Carrier concentration determined from C-V measurements
3. Dopant incorporation determined from SIMS measurements