Epitaxy

3C-SiC (100)

Substrate 1 Si(100)
Substrate diameter 2’’, 3’’, 100mm
Other substrate properties (thickness, doping type, resistivity, miscut …) Following the client’s request
Layer 3C-SiC (100)
Thickness range 2 0 – 20µm
Thickness variation 2 (σ/mean) ≤ 15%
Electrical conductivity n type
Unintentional doping 3 (ND-NA) ≤1x1016 cm-3
N incorporation 4 ≤1x1016 cm-3
AI incorporation 4 ≤1x1015 cm-3
Voluntary doping Nitrogen
Doping range 3,4 1x1016 − 1x1019 cm-3
Doping variation 3,4 (σ/mean) ≤ 50%
Surface defects density 5 ≤ 3x103 cm2
Layer
Layer polishing Reduction of epilayer’s roughness down to <10Å
Backside polishing of the wafer Mirror-like polishing
Detailed report on the layer properties, including FTIR, C-V, XRD, SEM and AFM results 7

1. If necessary, wafers may be supplied by novasic
2. Average layer thickness determined by sample weighing. Detailed thickness profile obtained by FTIR spectrometry
3. Carrier concentration determined from C-V measurements
4. Dopant incorporation determined from SIMS measurements
5. Microscopic inspection of crystallites or other macro-defects
6. For layers grown on 100mm, 525µm thick Si wafers
7. SEM on 2" and 3" wafers. C-V measurements possible on low doped layers (≤ 5x1017cm3) of sufficient thickness.