Epitaxy

Publications

• Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon
Sai Jiao (LMP-Univ. Tours / CRHEA-CNRS), Sébastien Roy (Saint-Gobain Recherche), Marc Portail (CRHEA-CNRS), Thierry Chassagne (NOVASiC), Jean-François Michaud (LMP-Univ. Tours), Marcin Zielinski (NOVASiC), Daniel Alquier (LMP-Univ. Tours)
(2010)

• Transmission electron microscopy evaluation of 3C-SiC/Si templates for III-nitride semiconductor growth
Maxim Korytov, Sebastien Roy, Philippe Vennéguès, Jean-Michel Chauveau, Olivier Tottereau, Maud Nemoz, Marcin Zielinski, Marc Portail, Thierry Chassagne, Eric Frayssinet, Yvon Cordier (CRHEA-CNRS)
(2010)

• Evaluation of the crystalline quality of strongly curved 3C SiC/Si epiwafers through X-Ray Diffraction analyses
Marcin Zielinski (NOVASiC), Sai Jiao (LMP-Univ. Tours / CRHEA-CNRS), Marc Portail (CRHEA-CNRS), Thierry Chassagne (NOVASiC), Maud Nemoz (CRHEA-CNRS), Jean-François Michaud (LMP-Univ. Tours), Daniel Alquier (LMP-Univ. Tours)
(2010)

• High quality ohmic contacts on 3C-SiC obtained by high and low process temperature
A.E. Bazin (LMP-Univ. Tours / STMicroelectronics), J.F. Michaud (LMP-Univ. Tours), F. Cayrel (LMP-Univ. Tours), M. Portail (CRHEA-CNRS), T. Chassagne (NOVASiC), M. Zielinski (NOVASiC), E. Collard (STMicroelectronics), D. Alquier (LMP-Univ. Tours)
(2010)

• Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates
M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
Journal of Applied Physics 105, 083505 (2009)

• Elaboration of (1 1 1) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mater. Sci. Eng. B (2009), doi:10.1016/j.mseb.2009.02.019 (in press)

• Highly sensitive determination of N+ doping level in 3C-SiC and GaN epilayers by Fourier transform infrared spectroscopy
M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mater. Sci. Eng. B (2009), doi:10.1016/j.mseb.2009.03.014 (in press)

• Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Materials Science Forum Vols. 615-617, pp. 169-172 (2009)

• Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self Standing 3C-SiC
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Materials Science Forum Vols. 615-617, pp. 49-52 (2009)

• 8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?
T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E. K. Polychroniadis, J. Camassel
Materials Science Forum Vols. 615-617, pp. 339-342 (2009)

• SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
M. Placidi, M. Zielinski, G. Abadal, J. Montserrat, P. Godignon
Materials Science Forum Vols. 615-617, pp 617-620 (2009)

• Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates
M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Materials Science Forum Vols. 600-603, pp. 207-210 (2009)

• Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates
M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Materials Science Forum Vols. 600-603, pp. 231-234 (2009)

• Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
Materials Science Forum Vols. 600-603, pp. 1277-1280 (2009)

• Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
Journal of Crystal Growth 310, pp. 3174-3182 (2008)

• AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
Journal of Crystal Growth 310, pp.4417-4423 (2008)

• P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si
Anne-Elisabeth Bazin, Jean-François Michaud, Marc Portail, Thierry Chassagne, Marcin Zielinski, Jean-Marc Lecoq, Emmanuel Collard, Daniel Alquier
Mater. Res. Soc. Symp. Proc. Vol. 1068, 1068-C07-09 (2008)

• Observation of Asymmetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates
Marcin Zielinski, Marc Portail, Thierry Chassagne, Slawomir Kret, Maud Nemoz, Yvon Cordier
Mater. Res. Soc. Symp. Proc. Vol. 1069, 1069-D07-09 (2008)

• Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
Phys. Stat. Sol. (c) 5, No. 6, 1983-1985 985 (2008)

• Cathodoluminescence investigation of stacking faults extension in 4H-SiC
S. Juillaguet, M. Albrecht, J. Camassel, T. Chassagne
Phys. Stat. Sol. (a) 204, No. 7, 2222–2228 (2007)

• Screening the built-in electric field in 4H silicon carbide stacking faults
S. Juillaguet, J. Camassel, M. Albrecht, T. Chassagne
Appl. Phys. Lett 90, 111902 (2007)

• Trends in dopant incorporation for 3C-SiC thin films on silicon
M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel
Materials Science Forum Vols.556-557, pp. 207-210 (2007)

• Low specific contact resistance to 3C-SiC grown on (100) Si substrates
A. E. Bazin, T. Chassagne, J. F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier
Materials Science Forum Vols.556-557, pp. 721-724 (2007)

• Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
M. Zielinski, S. Ndiaye, T. Chassagne, M. Portail, S. Juillaguet, R. Lewandowska, A. Leycuras, J. Camassel
Phys. Stat. Sol. (a) 204, 981-986 (2007)

• Stress relaxation during the growth of 3C-SiC/Si thin films
M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett. 89, 131906 (2006)

• Application of LTPL investigation methods to CVD-grown SiC
J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chemical Vapor Deposition 12, p.549 (2006)

• Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)
G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet, Y. Monteil
Chem. Vap. Deposition (2006), 483–488

• Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped α-SiC substrates grown by the M-PVT method
S. Contreras, M. Zielinski, L. Konczewicz, C. Blanc, S. Juillaguet, R. Müller, U. Künecke, P. Wellmann, J. Camassel
Materials Science Forum Vols. 527-529 pp. 633-636 (2006)

• Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC
M. Zielinski, C. Balloud, S. Juillaguet, B. Boyer, V. Soulière, J. Camassel
MSF - Materials Science Forum, Volume 483-485, 449 452, (2005)

• Control of 3C–SiC/Si wafer bending by the “checker-board” carbonization method
T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel
Phys. Stat. Sol. (a) 202, No. 4, 524–530 (2005)

• Behaviour of the 3C–SiC(100) c(2 × 2) (C-terminated) and 3 × 2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures
M. Portail, S. Saada, S. Delclos, J. C. Arnault, P. Soukiassian, Ph. Bergonzo, Th. Chassagne, A. Leycuras
Phys. Stat. Sol. (a) 202, No. 11, 2234–2239 (2005)

• Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennegues, A. Leycuras, D. Panknin Stoemenos, W. Skorupa
Materials Science Forum Vols. 483-485 (2005) pp. 213-216

crystal growth

• Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept
Meziere, J.; Ucar, M. (collaborator); Blanquet, E.; Pons, M.; Ferret, P.; Di Cioccio, L.
Journal of Crystal Growth (2004), 267(3-4), 436-451

• MOCVD processed platinum-aluminum coatings on titanium alloys
Delmas, M.; Ucar (collaborator), M.; Ressier,L.; Pons, M.; Vahlas, C.
Surface ans Coatings Technology (2004), 188-189, 49-54

• Large area DPB free (111) β-SiC thick layer grown on (0001) α-SiC nominal surfaces by the CF-PVT method
Chaussende, D.; Latu-Romain, L.; Auvray, L.; Ucar, M. (collaborator); Pons, M.; Madar, R.
Materials Science Forum (2005), 483-485(Silicon Carbide and Related Materials), 225-228

• Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
Pons, M.; Blanquet, E.; Dedulle, J. M.; Ucar, M. (collaborator); Wellmann, P.; Danielsson, O.; Ferret, P.; Di Cioccio, L.; Baillet, F.; Chaussende, D.; Madar, R.
Materials Science Forum (2005), 483-485(Silicon Carbide and Related Materials), 3-8

• Control of the supersaturation in the CFPVT process for the growth of silicon carbide crystals: research and applications
Chaussende D., Ucar M. (collaborator), Auvray L., Baillet F., Pons M., Madar R.
Crystal growth and design (2005), 5(4) :1539-1544

• Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth
Chichignoud G., Ucar-Morais M. (co-author), Pons M., Blanquet E.
Surface and Coatings Technology, Volume 201, Issues 22-23, 25 September 2007, Pages 8888-8892