events
June 7-11, 2010
E-MRS 2010 spring
Technical sessions:
June 7-11
Exhibit:
June 8-10
Congress Center, Strasbourg, France
Aug. 29-Sept. 2, 2010
The 8th European Conference on Silicon Carbide and Related Materials
Oslo, Norway
polishing
NOVASiC has developed innovative polishing processes for the different crystal types (6H, 4H, doped and semi-insulating, 3C, ...).
StepSiC® is our trade mark for the polishing of the Si-face.
State of the Art specifications to enhance epitaxy and device yields or performance: scratch free, low roughness, ultra-clean “epiready” surface, no damaged layers.
• No sub-surface damage after StepSiC® polishing of 4H and 6H-SiC wafers
• No sub-surface damage after polishing on 3C-SiC/Si
